IPW65R099

IPW65R099C6 vs IPW65R099C6,65C6099 vs IPW65R099C6FKSA1

 
PartNumberIPW65R099C6IPW65R099C6,65C6099IPW65R099C6FKSA1
DescriptionMOSFET N-Ch 700V 38A TO247-3RF Bipolar Transistors MOSFET N-Ch 700V 38A TO247-3
ManufacturerInfineon-Infineon Technologies
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleThrough Hole--
Package / CaseTO-247-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage650 V--
Id Continuous Drain Current38 A--
Rds On Drain Source Resistance89 mOhms--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge127 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation278 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameCoolMOS-CoolMOS
PackagingTube-Tube
Height21.1 mm--
Length16.13 mm--
SeriesCoolMOS C6-IPW65R099
Transistor Type1 N-Channel-1 N-Channel
Width5.21 mm--
BrandInfineon Technologies--
Fall Time6 ns--
Product TypeMOSFET--
Rise Time9 ns--
Factory Pack Quantity240--
SubcategoryMOSFETs--
Typical Turn Off Delay Time77 ns--
Typical Turn On Delay Time10.6 ns--
Part # AliasesIPW65R099C6FKSA1 IPW65R99C6XK SP000896396--
Unit Weight1.340411 oz-1.340411 oz
Part Aliases--IPW65R099C6 IPW65R099C6XK SP000896396
Package Case--TO-247-3
Id Continuous Drain Current--38 A
Vds Drain Source Breakdown Voltage--700 V
Rds On Drain Source Resistance--99 mOhms
制造商 型号 描述 RFQ
Infineon Technologies
Infineon Technologies
IPW65R099C6 MOSFET N-Ch 700V 38A TO247-3
IPW65R099C6FKSA1 RF Bipolar Transistors MOSFET N-Ch 700V 38A TO247-3
IPW65R099C6 Trans MOSFET N-CH 650V 38A 3-Pin TO-247 Tube (Alt: SP000896396)
IPW65R099C6,65C6099 全新原装
IPW65R099C6S 全新原装
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