 |  | | |
| PartNumber | IPW65R310CFDFKSA1 | IPW65R310CFD 65F6310 | IPW65R310CFD |
| Description | MOSFET LOW POWER_LEGACY | IGBT Transistors MOSFET N-Ch 650V 11.4A TO247-3 CoolMOS CFD2 | |
| Manufacturer | Infineon | - | Infineon Technologies |
| Product Category | MOSFET | - | Transistors - FETs, MOSFETs - Single |
| Technology | Si | - | Si |
| Mounting Style | Through Hole | - | Through Hole |
| Package / Case | TO-247-3 | - | - |
| Tradename | CoolMOS | - | CoolMOS |
| Packaging | Tube | - | Tube |
| Height | 21.1 mm | - | - |
| Length | 16.13 mm | - | - |
| Width | 5.21 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Product Type | MOSFET | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | IPW65R310CFDFKSA1 SP000890688 | - | - |
| Unit Weight | 1.340411 oz | - | 1.340411 oz |
| Series | - | - | CoolMOS CFD2 |
| Part Aliases | - | - | IPW65R310CFDFKSA1 IPW65R310CFDXK SP000890688 |
| Package Case | - | - | TO-247-3 |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 104.2 W |
| Fall Time | - | - | 7 ns |
| Rise Time | - | - | 7.5 ns |
| Vgs Gate Source Voltage | - | - | 30 V |
| Id Continuous Drain Current | - | - | 11.4 A |
| Vds Drain Source Breakdown Voltage | - | - | 650 V |
| Vgs th Gate Source Threshold Voltage | - | - | 4 V |
| Rds On Drain Source Resistance | - | - | 310 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Qg Gate Charge | - | - | 41 nC |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPW65R310CFDFKSA1 | MOSFET LOW POWER_LEGACY | |
| IPW65R310CFD 65F6310 | 全新原装 | ||
Infineon Technologies |
IPW65R310CFDFKSA1 | MOSFET N-CH 650V 11.4A TO247 | |
| IPW65R310CFD | IGBT Transistors MOSFET N-Ch 650V 11.4A TO247-3 CoolMOS CFD2 | ||
| IPW65R310CFDAFKSA1 | RF Bipolar Transistors MOSFET N-Ch 700V 11.4A TO247-3 |