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| PartNumber | IRF3007PBF | IRF3007PBF,IRF1010EPBF,I | IRF3007PBF,IRF3007,F3007 |
| Description | MOSFET 75V 1 N-CH HEXFET 12.6mOhms 89nC | ||
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 75 V | - | - |
| Id Continuous Drain Current | 80 A | - | - |
| Rds On Drain Source Resistance | 12.6 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 89 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 200 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 15.65 mm | - | - |
| Length | 10 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | Automotive MOSFET | - | - |
| Width | 4.4 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 49 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 80 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 55 ns | - | - |
| Typical Turn On Delay Time | 12 ns | - | - |
| Part # Aliases | SP001571144 | - | - |
| Unit Weight | 0.211644 oz | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IRF3007PBF | MOSFET 75V 1 N-CH HEXFET 12.6mOhms 89nC | |
| IRF3007PBF | RF Bipolar Transistors MOSFET 75V 1 N-CH HEXFET 12.6mOhms 89nC | ||
| IRF3007PBF,IRF1010EPBF,I | 全新原装 | ||
| IRF3007PBF,IRF3007,F3007 | 全新原装 |