IRF40

IRF40DM229 vs IRF40B207 vs IRF40H210

 
PartNumberIRF40DM229IRF40B207IRF40H210
DescriptionMOSFETMOSFET TRENCH_MOSFETSMOSFET TRENCH_MOSFETS
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTThrough HoleSMD/SMT
Package / CaseDirectFET-MFTO-220-3PQFN-8
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage40 V40 V40 V
Id Continuous Drain Current159 A95 A201 A
Rds On Drain Source Resistance1.4 mOhms3.6 mOhms1.4 mOhms
Vgs th Gate Source Threshold Voltage2.2 V2.2 V2.2 V
Vgs Gate Source Voltage20 V20 V20 V
Qg Gate Charge161 nC68 nC70 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 175 C+ 150 C
Pd Power Dissipation83 W83 W125 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenameStrongIRFETStrongIRFETStrongIRFET
PackagingReelTubeReel
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandInfineon TechnologiesInfineon TechnologiesInfineon / IR
Forward Transconductance Min87 S170 S113 S
Fall Time54 ns19 ns34 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time66 ns35 ns25 ns
Factory Pack Quantity480010004000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time54 ns25 ns65 ns
Typical Turn On Delay Time16 ns7.8 ns9.2 ns
Part # AliasesSP001576692SP001564728SP001571340
Height-15.65 mm0.83 mm
Length-10 mm6 mm
Width-4.4 mm5 mm
Unit Weight-0.211644 oz-
制造商 型号 描述 RFQ
Infineon Technologies
Infineon Technologies
IRF40DM229 MOSFET
IRF40B207 MOSFET TRENCH_MOSFETS
IRF40R207 MOSFET TRENCH_MOSFETS
IRF40H233XTMA1 MOSFET
IRF40H233XTMA1 TRENCH <= 40V
IRF40B207 MOSFET N-CH 40V 95A TO-220AB
IRF40DM229 MOSFET N-CH 40V 159A ISOMETRICMF
IRF40H210 MOSFET N-CH 40V 100A PQFN5X6
IRF40R207 MOSFET N-CH 40V 56A DPAK
Infineon / IR
Infineon / IR
IRF40H210 MOSFET TRENCH_MOSFETS
IRF40DL237 TRENCH MOSFETS DESIGNIN - Tape and Reel (Alt: IRF40DL237)
IRF4000TR 全新原装
IRF4014PBF 全新原装
IRF40H210TRPBF 全新原装
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