PartNumber | IRF40DM229 | IRF40B207 | IRF40H210 |
Description | MOSFET | MOSFET TRENCH_MOSFETS | MOSFET TRENCH_MOSFETS |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | Through Hole | SMD/SMT |
Package / Case | DirectFET-MF | TO-220-3 | PQFN-8 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 40 V | 40 V | 40 V |
Id Continuous Drain Current | 159 A | 95 A | 201 A |
Rds On Drain Source Resistance | 1.4 mOhms | 3.6 mOhms | 1.4 mOhms |
Vgs th Gate Source Threshold Voltage | 2.2 V | 2.2 V | 2.2 V |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Qg Gate Charge | 161 nC | 68 nC | 70 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 175 C | + 150 C |
Pd Power Dissipation | 83 W | 83 W | 125 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | StrongIRFET | StrongIRFET | StrongIRFET |
Packaging | Reel | Tube | Reel |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | Infineon Technologies | Infineon Technologies | Infineon / IR |
Forward Transconductance Min | 87 S | 170 S | 113 S |
Fall Time | 54 ns | 19 ns | 34 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 66 ns | 35 ns | 25 ns |
Factory Pack Quantity | 4800 | 1000 | 4000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 54 ns | 25 ns | 65 ns |
Typical Turn On Delay Time | 16 ns | 7.8 ns | 9.2 ns |
Part # Aliases | SP001576692 | SP001564728 | SP001571340 |
Height | - | 15.65 mm | 0.83 mm |
Length | - | 10 mm | 6 mm |
Width | - | 4.4 mm | 5 mm |
Unit Weight | - | 0.211644 oz | - |