 |  | | |
| PartNumber | IRF540NSPBF | IRF540NSPBF(94-2358) | IRF540NSPBF(94-2358PBF) |
| Description | MOSFET N-CH 100V 33A D2PAK | ||
| Manufacturer | IR | - | - |
| Product Category | FETs - Single | - | - |
| Packaging | Tube | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package Case | TO-252-3 | - | - |
| Technology | Si | - | - |
| Number of Channels | 1 Channel | - | - |
| Configuration | Single | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Pd Power Dissipation | 3.8 W | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Fall Time | 35 ns | - | - |
| Rise Time | 35 ns | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Id Continuous Drain Current | 33 A | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - | - |
| Rds On Drain Source Resistance | 44 mOhms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Typical Turn Off Delay Time | 39 ns | - | - |
| Typical Turn On Delay Time | 11 ns | - | - |
| Qg Gate Charge | 47.3 nC | - | - |
| Forward Transconductance Min | 21 S | - | - |
| Channel Mode | Enhancement | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IRF540NSPBF | MOSFET N-CH 100V 33A D2PAK | |
| IRF540NSPBF(94-2358) | 全新原装 | ||
| IRF540NSPBF(94-2358PBF) | 全新原装 |