IRF6668

IRF6668TRPBF vs IRF6668TR1 vs IRF6668TR1PBF

 
PartNumberIRF6668TRPBFIRF6668TR1IRF6668TR1PBF
DescriptionMOSFET 80V 1 N-CH HEXFET 15mOhms 22nCMOSFET N-CH 80V 55A DIRECTFET-MZMOSFET N-CH 80V 55A DIRECTFET
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseDirectFET-MZ--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage80 V--
Id Continuous Drain Current55 A--
Rds On Drain Source Resistance12 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge22 nC--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.8 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameDirectFET--
PackagingReel--
Height0.7 mm--
Length6.35 mm--
Transistor Type1 N-Channel--
Width5.05 mm--
BrandInfineon Technologies--
Forward Transconductance Min22 S--
Fall Time23 ns--
Product TypeMOSFET--
Rise Time13 ns--
Factory Pack Quantity4800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time7.1 ns--
Typical Turn On Delay Time19 ns--
Part # AliasesSP001551178--
制造商 型号 描述 RFQ
Infineon Technologies
Infineon Technologies
IRF6668TRPBF MOSFET 80V 1 N-CH HEXFET 15mOhms 22nC
IRF6668TR1 MOSFET N-CH 80V 55A DIRECTFET-MZ
IRF6668TR1PBF MOSFET N-CH 80V 55A DIRECTFET
IRF6668TRPBF MOSFET N-CH 80V 55A DIRECTFET
IRF6668 全新原装
IRF6668TR 全新原装
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