IRF7316T

IRF7316TRPBF vs IRF7316TR vs IRF7316TRPB

 
PartNumberIRF7316TRPBFIRF7316TRIRF7316TRPB
DescriptionMOSFET MOSFT DUAL PCh -30V 4.9AMOSFET 2P-CH 30V 4.9A 8-SOIC
ManufacturerInfineonInfineon TechnologiesInfineon Technologies
Product CategoryMOSFETFETs - ArraysFETs - Arrays
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseSO-8--
Number of Channels2 Channel-2 Channel
Transistor PolarityP-Channel-P-Channel
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current4.9 A--
Rds On Drain Source Resistance76 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge23 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation2 W--
ConfigurationDual-Dual
Channel ModeEnhancement-Enhancement
PackagingReelTape & Reel (TR)Digi-ReelR Alternate Packaging
Height1.75 mm--
Length4.9 mm--
Transistor Type2 P-Channel-2 P-Channel
Width3.9 mm--
BrandInfineon / IR--
Forward Transconductance Min7.7 S--
Fall Time32 ns-32 ns
Product TypeMOSFET--
Rise Time13 ns-13 ns
Factory Pack Quantity4000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time34 ns-34 ns
Typical Turn On Delay Time13 ns-13 ns
Part # AliasesSP001565294--
Unit Weight0.017870 oz-0.017870 oz
Series-HEXFETRHEXFETR
Package Case-8-SOIC (0.154", 3.90mm Width)8-SOIC (0.154", 3.90mm Width)
Operating Temperature--55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Mounting Type-Surface MountSurface Mount
Supplier Device Package-8-SO8-SO
FET Type-2 P-Channel (Dual)2 P-Channel (Dual)
Power Max-2W2W
Drain to Source Voltage Vdss-30V30V
Input Capacitance Ciss Vds-710pF @ 25V710pF @ 25V
FET Feature-Logic Level GateLogic Level Gate
Current Continuous Drain Id 25°C-4.9A4.9A
Rds On Max Id Vgs-58 mOhm @ 4.9A, 10V58 mOhm @ 4.9A, 10V
Vgs th Max Id-1V @ 250μA1V @ 250μA
Gate Charge Qg Vgs-34nC @ 10V34nC @ 10V
Pd Power Dissipation--2 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--- 4.9 A
Vds Drain Source Breakdown Voltage--- 30 V
Vgs th Gate Source Threshold Voltage--- 1 V
Rds On Drain Source Resistance--76 mOhms
Qg Gate Charge--23 nC
Forward Transconductance Min--7.7 S
制造商 型号 描述 RFQ
Infineon / IR
Infineon / IR
IRF7316TRPBF MOSFET MOSFT DUAL PCh -30V 4.9A
Infineon Technologies
Infineon Technologies
IRF7316TRPBF MOSFET 2P-CH 30V 4.9A 8-SOIC
IRF7316TR MOSFET 2P-CH 30V 4.9A 8-SOIC
IRF7316TRPBF-CUT TAPE 全新原装
IRF7316TRPB 全新原装
IRF7316TRPBF , 2SJ610 全新原装
IRF7316TRPBF,IRF7316TR,IRF7316PBF, 全新原装
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