| PartNumber | IRF7342D2TRPBF | IRF7342PBF | IRF7342QTRPBF |
| Description | MOSFET MOSFET, P-CHANNEL copack with Schottky, -55V, -3.4A, 105 mOhm, 26 nC Qg, SO-8 | MOSFET DUAL -55V P-CH 20V VGS 55V BVDSS | MOSFET AUTO HEXFET SO-8 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SO-8 | SO-8 | SO-8 |
| Number of Channels | 1 Channel | 2 Channel | 2 Channel |
| Transistor Polarity | P-Channel | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 55 V | 55 V | 55 V |
| Id Continuous Drain Current | 3.4 A | 3.4 A | 3.4 A |
| Rds On Drain Source Resistance | 170 mOhms | 105 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 26 nC | 26 nC | 25.3 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 2 W | 2 W | 2 W |
| Configuration | Single | Dual | Dual |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Tube | - |
| Height | 1.75 mm | 1.75 mm | 1.75 mm |
| Length | 4.9 mm | 4.9 mm | 4.9 mm |
| Transistor Type | 1 P-Channel | 2 P-Channel | 2 P-Channel |
| Type | FETKY MOSFET & Schottky Diode | Power MOSFET | - |
| Width | 3.9 mm | 3.9 mm | 3.9 mm |
| Brand | Infineon / IR | Infineon / IR | Infineon / IR |
| Forward Transconductance Min | 3.3 S | - | - |
| Fall Time | 22 ns | 22 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 10 ns | 10 ns | - |
| Factory Pack Quantity | 4000 | 3800 | - |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 43 ns | 43 ns | - |
| Typical Turn On Delay Time | 14 ns | 14 ns | - |
| Part # Aliases | SP001570320 | SP001571984 | - |
| Unit Weight | 0.019048 oz | 0.019048 oz | 0.019048 oz |