IRF7389

IRF7389TRPBF vs IRF7389PBF vs IRF7389PBF-1

 
PartNumberIRF7389TRPBFIRF7389PBFIRF7389PBF-1
DescriptionMOSFET MOSFT DUAL N/PCh 30V 7.3AMOSFET 30V DUAL N / P CH 20V VGS MAX
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSO-8SO-8-
Number of Channels2 Channel2 Channel-
Transistor PolarityN-Channel, P-ChannelN-Channel, P-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current7.3 A7.3 A-
Rds On Drain Source Resistance46 mOhms58 mOhms-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge22 nC22 nC-
Pd Power Dissipation2.5 W2.5 W-
ConfigurationDualDual-
PackagingReelTube-
Height1.75 mm1.75 mm-
Length4.9 mm4.9 mm-
Transistor Type1 N-Channel, 1 P-Channel1 N-Channel, 1 P-Channel-
Width3.9 mm3.9 mm-
BrandInfineon / IRInfineon Technologies-
Product TypeMOSFETMOSFET-
Factory Pack Quantity40003800-
SubcategoryMOSFETsMOSFETs-
Part # AliasesSP001554234SP001574944-
Unit Weight0.019048 oz0.019048 oz-
Vgs th Gate Source Threshold Voltage-1 V-
Minimum Operating Temperature-- 55 C-
Maximum Operating Temperature-+ 150 C-
Channel Mode-Enhancement-
Type-Power MOSFET-
Forward Transconductance Min-14 S-
Fall Time-17 ns, 32 ns-
Rise Time-8.9 ns, 13 ns-
Typical Turn Off Delay Time-26 ns, 34 ns-
Typical Turn On Delay Time-8.1 ns, 13 ns-
制造商 型号 描述 RFQ
Infineon / IR
Infineon / IR
IRF7389TRPBF MOSFET MOSFT DUAL N/PCh 30V 7.3A
Infineon Technologies
Infineon Technologies
IRF7389PBF MOSFET 30V DUAL N / P CH 20V VGS MAX
IRF7389TRPBF-CUT TAPE 全新原装
IRF7389PBF-1 全新原装
Infineon Technologies
Infineon Technologies
IRF7389 MOSFET N/P-CH 30V 8-SOIC
IRF7389PBF Trans MOSFET N/P-CH 30V 7.3A/5.3A 8-Pin SOIC Tube
IRF7389TR MOSFET N/P-CH 30V 8-SOIC
IRF7389TRPBF MOSFET N/P-CH 30V 8-SOIC
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