IRF7476

IRF7476TRPBF vs IRF7476 vs IRF7476PBF

 
PartNumberIRF7476TRPBFIRF7476IRF7476PBF
DescriptionMOSFET MOSFT 12V 15A 8mOhm 26nCMOSFET N-CH 12V 15A 8-SOICIGBT Transistors MOSFET 20V DUAL N-CH HEXFET 8mOhms 26nC
ManufacturerInfineon-KEXIN
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseSO-8--
Number of Channels1 Channel-2 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage12 V--
Id Continuous Drain Current15 A--
Rds On Drain Source Resistance8 mOhms--
Vgs th Gate Source Threshold Voltage1.9 V--
Qg Gate Charge40 nC--
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation2.5 W--
ConfigurationSingle-Single Quad Drain Triple Source
PackagingReel-Tube
Height1.75 mm--
Length4.9 mm--
Transistor Type1 N-Channel-2 N-Channel
Width3.9 mm--
BrandInfineon Technologies--
Forward Transconductance Min31 S--
Fall Time8.3 ns-8.3 ns
Product TypeMOSFET--
Rise Time29 ns-29 ns
Factory Pack Quantity4000--
SubcategoryMOSFETs--
Part # AliasesSP001554312--
Unit Weight0.019048 oz-0.019048 oz
Package Case--SOIC-8
Pd Power Dissipation--2.5 W
Minimum Operating Temperature--- 55 C
Vgs Gate Source Voltage--12 V
Id Continuous Drain Current--15 A
Vds Drain Source Breakdown Voltage--12 V
Vgs th Gate Source Threshold Voltage--1.9 V
Rds On Drain Source Resistance--8 mOhms
Typical Turn Off Delay Time--19 ns
Typical Turn On Delay Time--11 ns
Qg Gate Charge--26 nC
Forward Transconductance Min--31 S
Channel Mode--Enhancement
制造商 型号 描述 RFQ
Infineon Technologies
Infineon Technologies
IRF7476TRPBF MOSFET MOSFT 12V 15A 8mOhm 26nC
IRF7476 MOSFET N-CH 12V 15A 8-SOIC
IRF7476TRPBF MOSFET N-CH 12V 15A 8-SOIC
IRF7476TRPBF. 全新原装
IRF7476TRPBF,F7476,IRF74 全新原装
IRF7476PBF IGBT Transistors MOSFET 20V DUAL N-CH HEXFET 8mOhms 26nC
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