IRF7503TR

IRF7503TRPBF vs IRF7503TRPBF-CUT TAPE vs IRF7503TR

 
PartNumberIRF7503TRPBFIRF7503TRPBF-CUT TAPEIRF7503TR
DescriptionMOSFET MOSFT DUAL NCh 30V 2.4A Micro 8MOSFET 2N-CH 30V 2.4A MICRO8
ManufacturerInfineon-Infineon Technologies
Product CategoryMOSFET-FETs - Arrays
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseMicro-8--
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current2.4 A--
Rds On Drain Source Resistance135 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge7.8 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.25 W--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReel-Digi-ReelR
Height1.11 mm--
Length3 mm--
Transistor Type2 N-Channel--
Width3 mm--
BrandInfineon Technologies--
Forward Transconductance Min1.9 S--
Fall Time5.3 ns--
Product TypeMOSFET--
Rise Time10 ns--
Factory Pack Quantity4000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time12 ns--
Typical Turn On Delay Time4.7 ns--
Part # AliasesSP001555496--
Unit Weight0.000901 oz--
Series--HEXFETR
Package Case--8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--Micro8
FET Type--2 N-Channel (Dual)
Power Max--1.25W
Drain to Source Voltage Vdss--30V
Input Capacitance Ciss Vds--210pF @ 25V
FET Feature--Logic Level Gate
Current Continuous Drain Id 25°C--2.4A
Rds On Max Id Vgs--135 mOhm @ 1.7A, 10V
Vgs th Max Id--1V @ 250μA
Gate Charge Qg Vgs--12nC @ 10V
制造商 型号 描述 RFQ
Infineon Technologies
Infineon Technologies
IRF7503TRPBF MOSFET MOSFT DUAL NCh 30V 2.4A Micro 8
IRF7503TR MOSFET 2N-CH 30V 2.4A MICRO8
IRF7503TRPBF MOSFET 2N-CH 30V 2.4A MICRO8
IRF7503TRPBF-CUT TAPE 全新原装
IRF7503TRPB 全新原装
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