IRF7807VD1T

IRF7807VD1TRPBF. vs IRF7807VD1TR vs IRF7807VD1TRPBF

 
PartNumberIRF7807VD1TRPBF.IRF7807VD1TRIRF7807VD1TRPBF
DescriptionMOSFET N-CH 30V 8.3A 8-SOICMOSFET N-CH 30V 8.3A 8-SOIC
Manufacturer-IRIR
Product Category-FETs - SingleFETs - Single
Packaging--Reel
Unit Weight--0.019048 oz
Mounting Style--SMD/SMT
Package Case--SOIC-8
Technology--Si
Number of Channels--1 Channel
Configuration--Single with Schottky Diode
Transistor Type--1 N-Channel
Pd Power Dissipation--2.5 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--8.3 A
Vds Drain Source Breakdown Voltage--30 V
Rds On Drain Source Resistance--25 mOhms
Transistor Polarity--N-Channel
Qg Gate Charge--9.5 nC
制造商 型号 描述 RFQ
IRF7807VD1TRPBF. 全新原装
Infineon Technologies
Infineon Technologies
IRF7807VD1TR MOSFET N-CH 30V 8.3A 8-SOIC
IRF7807VD1TRPBF MOSFET N-CH 30V 8.3A 8-SOIC
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