IRF9310T

IRF9310TRPBF vs IRF9310TR vs IRF9310TRPBF.

 
PartNumberIRF9310TRPBFIRF9310TRIRF9310TRPBF.
DescriptionMOSFET MOSFT P-Ch -30V -20A 4.6mOhmP CHANNEL, MOSFET, -30V, -20A, SOIC
ManufacturerInfineonIR-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSO-8--
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current20 A--
Rds On Drain Source Resistance6.8 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge58 nC--
Pd Power Dissipation2.5 W--
PackagingReelDigi-ReelR Alternate Packaging-
Height1.75 mm--
Length4.9 mm--
Width3.9 mm--
BrandInfineon / IR--
Product TypeMOSFET--
Factory Pack Quantity4000--
SubcategoryMOSFETs--
Part # AliasesSP001572210--
Unit Weight0.067021 oz0.019048 oz-
Series-HEXFETR-
Package Case-8-SOIC (0.154", 3.90mm Width)-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-8-SO-
FET Type-MOSFET P-Channel, Metal Oxide-
Power Max-2.5W-
Drain to Source Voltage Vdss-30V-
Input Capacitance Ciss Vds-5250pF @ 15V-
FET Feature-Standard-
Current Continuous Drain Id 25°C-20A (Tc)-
Rds On Max Id Vgs-4.6 mOhm @ 20A, 10V-
Vgs th Max Id-2.4V @ 100μA-
Gate Charge Qg Vgs-165nC @ 10V-
Pd Power Dissipation-2.5 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-- 20 A-
Vds Drain Source Breakdown Voltage-- 30 V-
Rds On Drain Source Resistance-6.8 mOhms-
Qg Gate Charge-58 nC-
制造商 型号 描述 RFQ
Infineon / IR
Infineon / IR
IRF9310TRPBF MOSFET MOSFT P-Ch -30V -20A 4.6mOhm
IRF9310TR 全新原装
IRF9310TRPBF. P CHANNEL, MOSFET, -30V, -20A, SOIC
Infineon Technologies
Infineon Technologies
IRF9310TRPBF MOSFET P-CH 30V 20A 8-SOIC
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