IRF9Z24NP

IRF9Z24NPBF vs IRF9Z24NPB vs IRF9Z24NPBF , 2SK1060-Z-

 
PartNumberIRF9Z24NPBFIRF9Z24NPBIRF9Z24NPBF , 2SK1060-Z-
DescriptionMOSFET MOSFT PCh -55V -12A 175mOhm 12.7nC
ManufacturerInfineonIR-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage55 V--
Id Continuous Drain Current12 A--
Rds On Drain Source Resistance175 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge12.7 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation45 W--
ConfigurationSingleSingle-
PackagingTubeTube-
Height15.65 mm--
Length10 mm--
Transistor Type1 P-Channel1 P-Channel-
Width4.4 mm--
BrandInfineon / IR--
Forward Transconductance Min2.5 S--
Fall Time37 ns37 ns-
Product TypeMOSFET--
Rise Time55 ns55 ns-
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time23 ns23 ns-
Typical Turn On Delay Time13 ns13 ns-
Part # AliasesSP001555934--
Unit Weight0.211644 oz0.211644 oz-
Package Case-TO-220-3-
Pd Power Dissipation-45 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-- 12 A-
Vds Drain Source Breakdown Voltage-- 55 V-
Vgs th Gate Source Threshold Voltage-- 4 V-
Rds On Drain Source Resistance-175 mOhms-
Qg Gate Charge-12.7 nC-
Forward Transconductance Min-2.5 S-
制造商 型号 描述 RFQ
Infineon / IR
Infineon / IR
IRF9Z24NPBF MOSFET MOSFT PCh -55V -12A 175mOhm 12.7nC
IRF9Z24NPBF C 全新原装
IRF9Z24NPB 全新原装
IRF9Z24NPBF , 2SK1060-Z- 全新原装
IRF9Z24NPBF,F9Z24N,IRF9Z 全新原装
IRF9Z24NPBF,IRF9Z24N 全新原装
IRF9Z24NPBF-CN 全新原装
IRF9Z24NPBF-MEX 全新原装
IRF9Z24NPBF. PLANAR_MOSFETS ROHS COMPLIANT: YES
Infineon Technologies
Infineon Technologies
IRF9Z24NPBF MOSFET P-CH 55V 12A TO-220AB
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