 |  | | |
| PartNumber | IRFB59N10DPBF | IRFB59N10D FB59N10D | IRFB59N10D |
| Description | MOSFET MOSFT 100V 59A 25mOhm 76nC | ||
| Manufacturer | Infineon | - | IR/VISHAY |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 59 A | - | - |
| Rds On Drain Source Resistance | 32 mOhms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 76 nC | - | - |
| Pd Power Dissipation | 200 W | - | - |
| Configuration | Single | - | - |
| Packaging | Tube | - | - |
| Height | 15.65 mm | - | - |
| Length | 10 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.4 mm | - | - |
| Brand | Infineon / IR | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | SP001560232 | - | - |
| Unit Weight | 0.211644 oz | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon / IR |
IRFB59N10DPBF | MOSFET MOSFT 100V 59A 25mOhm 76nC | |
| IRFB59N10D FB59N10D | 全新原装 | ||
| IRFB59N10D | 全新原装 | ||
| IRFB59N10DPBF,FB59N10D,I | 全新原装 | ||
Infineon Technologies |
IRFB59N10DPBF | MOSFET N-CH 100V 59A TO-220AB |