 | |  | |
| PartNumber | IRFBG30PBF | IRFBG30 | IRFBG30-005 |
| Description | MOSFET N-CH 1000V HEXFET MOSFET | MOSFET RECOMMENDED ALT 844-IRFBG30PBF | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | E | N | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220AB-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 1 kV | - | - |
| Id Continuous Drain Current | 3.1 A | - | - |
| Rds On Drain Source Resistance | 5 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 80 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 125 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | Tube | - |
| Series | IRFBG | IRFBG | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Forward Transconductance Min | 2.1 S | - | - |
| Fall Time | 29 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 25 ns | - | - |
| Factory Pack Quantity | 50 | 50 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 89 ns | - | - |
| Typical Turn On Delay Time | 12 ns | - | - |
| Unit Weight | 0.211644 oz | 0.211644 oz | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
IRFBG30PBF | MOSFET N-CH 1000V HEXFET MOSFET | |
| IRFBG30 | MOSFET RECOMMENDED ALT 844-IRFBG30PBF | ||
| IRFBG30-005 | 全新原装 | ||
| IRFBG30PBF,IRFBG30,FBG30 | 全新原装 | ||
Vishay |
IRFBG30PBF | MOSFET N-CH 1000V 3.1A TO-220AB | |
| IRFBG30 | IGBT Transistors MOSFET 1000V Single N-Channel HEXFET |