 |  | | |
| PartNumber | IRFD120PBF | IRFD120PBF,FD120,IRFD120 | IRFD120PBF,IRFD120 |
| Description | MOSFET N-CH 100V HEXFET MOSFET HEXDI | ||
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | HVMDIP-4 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 1.3 A | - | - |
| Rds On Drain Source Resistance | 270 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 16 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 1.3 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 3.37 mm | - | - |
| Length | 6.29 mm | - | - |
| Series | IRFD | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 0.8 S | - | - |
| Fall Time | 17 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 27 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 18 ns | - | - |
| Typical Turn On Delay Time | 6.8 ns | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
IRFD120PBF | MOSFET N-CH 100V HEXFET MOSFET HEXDI | |
Vishay |
IRFD120PBF | MOSFET N-CH 100V 1.3A 4-DIP | |
| IRFD120PBF,FD120,IRFD120 | 全新原装 | ||
| IRFD120PBF,IRFD120 | 全新原装 | ||
| IRFD120PBF-IRFD | 全新原装 | ||
| IRFD120PBF-PHL | 全新原装 | ||
| IRFD120PBF. | MOSFET N-CHANNEL 100V ROHS COMPLIANT: NO |