 | |  | |
| PartNumber | IRFH7107TRPBF | IRFH7107TR2PBF | IRFH7107TRPBF. |
| Description | MOSFET 75V 75A 8.5mOhm 48nC Qg | MOSFET 75V 75A 8.5mOhm 48nC Qg | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PQFN-8 | PQFN-8 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Configuration | Single | Single | - |
| Tradename | StrongIRFET | StrongIRFET | - |
| Packaging | Reel | Reel | - |
| Height | 0.83 mm | 0.83 mm | - |
| Length | 6 mm | 6 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 5 mm | 5 mm | - |
| Brand | Infineon / IR | Infineon / IR | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 4000 | 400 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | SP001566012 | SP001551916 | - |
| Vds Drain Source Breakdown Voltage | - | 75 V | - |
| Id Continuous Drain Current | - | 75 A | - |
| Rds On Drain Source Resistance | - | 8.5 mOhms | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Qg Gate Charge | - | 48 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 3.6 W | - |
| Forward Transconductance Min | - | 68 S | - |
| Fall Time | - | 6.5 ns | - |
| Rise Time | - | 12 ns | - |
| Unit Weight | - | 0.001164 oz | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon / IR |
IRFH7107TRPBF | MOSFET 75V 75A 8.5mOhm 48nC Qg | |
| IRFH7107TR2PBF | MOSFET 75V 75A 8.5mOhm 48nC Qg | ||
| IRFH7107TRPBF. | 全新原装 | ||
Infineon Technologies |
IRFH7107TR2PBF | IGBT Transistors MOSFET 75V 75A 8.5mOhm 48nC Qg | |
| IRFH7107TRPBF | RF Bipolar Transistors MOSFET 75V 75A 8.5mOhm 48nC Qg |