| PartNumber | IRFR3303CPBF | IRFR3303PBF | IRFR3303TR |
| Description | MOSFET N-CH 30V 33A DPAK | MOSFET N-CH 30V 33A DPAK | MOSFET N-CH 30V 33A DPAK |
| Manufacturer | - | IR | IR |
| Product Category | - | FETs - Single | FETs - Single |
| Packaging | - | Tube | - |
| Unit Weight | - | 0.139332 oz | - |
| Mounting Style | - | SMD/SMT | - |
| Package Case | - | TO-252-3 | - |
| Technology | - | Si | - |
| Number of Channels | - | 1 Channel | - |
| Configuration | - | Single | - |
| Transistor Type | - | 1 N-Channel | - |
| Pd Power Dissipation | - | 57 W | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Fall Time | - | 28 ns | - |
| Rise Time | - | 99 ns | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 33 A | - |
| Vds Drain Source Breakdown Voltage | - | 30 V | - |
| Vgs th Gate Source Threshold Voltage | - | 2 V to 4 V | - |
| Rds On Drain Source Resistance | - | 31 mOhms | - |
| Transistor Polarity | - | N-Channel | - |
| Typical Turn Off Delay Time | - | 16 ns | - |
| Typical Turn On Delay Time | - | 11 ns | - |
| Qg Gate Charge | - | 19.3 nC | - |
| Forward Transconductance Min | - | 9.3 S | - |
| Channel Mode | - | Enhancement | - |