IRFR7546

IRFR7546TRPBF vs IRFR7546PBF vs IRFR7546TRPBF-CUT TAPE

 
PartNumberIRFR7546TRPBFIRFR7546PBFIRFR7546TRPBF-CUT TAPE
DescriptionMOSFET 60V StrongIRFET Power MosfetMOSFET N-CH 60V 56A DPAK
ManufacturerInfineonInternational Rectifier-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current71 A--
Rds On Drain Source Resistance8.5 mOhms--
Vgs th Gate Source Threshold Voltage3.7 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge58 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation99 W--
ConfigurationSingleSingle-
TradenameStrongIRFET--
PackagingReelTube-
Height2.3 mm--
Length6.5 mm--
Transistor Type1 N-Channel1 N-Channel-
Width6.22 mm--
BrandInfineon Technologies--
Forward Transconductance Min56 S--
Fall Time20 ns20 ns-
Product TypeMOSFET--
Rise Time28 ns28 ns-
Factory Pack Quantity2000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time36 ns36 ns-
Typical Turn On Delay Time8.1 ns8.1 ns-
Part # AliasesSP001567604--
Unit Weight0.139332 oz0.139332 oz-
Package Case-TO-252-3-
Pd Power Dissipation-99 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-71 A-
Vds Drain Source Breakdown Voltage-60 V-
Vgs th Gate Source Threshold Voltage-3.7 V-
Rds On Drain Source Resistance-7.9 mOhms-
Qg Gate Charge-58 nC-
Forward Transconductance Min-56 S-
制造商 型号 描述 RFQ
Infineon Technologies
Infineon Technologies
IRFR7546TRPBF MOSFET 60V StrongIRFET Power Mosfet
IRFR7546PBF MOSFET N-CH 60V 56A DPAK
IRFR7546TRPBF MOSFET N-CH 60V 71A DPAK
IRFR7546TRPBF-CUT TAPE 全新原装
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