IRG4BC20KD-S

IRG4BC20KD-SPBF vs IRG4BC20KD-STRR vs IRG4BC20KD-S

 
PartNumberIRG4BC20KD-SPBFIRG4BC20KD-STRRIRG4BC20KD-S
DescriptionIGBT Transistors 600V ULTRAFAST 8-25 KHZ COPACK IGBTIGBT 600V 16A 60W D2PAKIGBT 600V 16A 60W D2PAK
ManufacturerInfineon-Infineon Technologies
Product CategoryIGBT Transistors-IGBTs - Single
RoHSY--
TechnologySi--
Package / CaseDPAK-3--
Mounting StyleSMD/SMT--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage2.27 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C16 A--
Pd Power Dissipation60 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
PackagingTube-Tube
Continuous Collector Current Ic Max16 A--
Height4.83 mm--
Length10.67 mm--
Width9.65 mm--
BrandInfineon Technologies--
Gate Emitter Leakage Current100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity50--
SubcategoryIGBTs--
Part # AliasesSP001545800--
Unit Weight0.009185 oz--
Series---
Package Case--TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Input Type--Standard
Mounting Type--Surface Mount
Supplier Device Package--D2PAK
Power Max--60W
Reverse Recovery Time trr--37ns
Current Collector Ic Max--16A
Voltage Collector Emitter Breakdown Max--600V
IGBT Type---
Current Collector Pulsed Icm--32A
Vce on Max Vge Ic--2.8V @ 15V, 9A
Switching Energy--340μJ (on), 300μJ (off)
Gate Charge--34nC
Td on off 25°C--54ns/180ns
Test Condition--480V, 9A, 50 Ohm, 15V
制造商 型号 描述 RFQ
Infineon Technologies
Infineon Technologies
IRG4BC20KD-SPBF IGBT Transistors 600V ULTRAFAST 8-25 KHZ COPACK IGBT
IRG4BC20KD-STRR IGBT 600V 16A 60W D2PAK
IRG4BC20KD-SPBF IGBT Transistors 600V ULTRAFAST 8-25 KHZ COPACK IGBT
IRG4BC20KD-S IGBT 600V 16A 60W D2PAK
IRG4BC20KD-STRLP 全新原装
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