IRG4IBC1

IRG4IBC10UDPBF vs IRG4IBC10UD vs IRG4IBC10UD,G4IBC10UD,IR

 
PartNumberIRG4IBC10UDPBFIRG4IBC10UDIRG4IBC10UD,G4IBC10UD,IR
DescriptionIGBT Transistors 600V UltraFast 8-60kHzIGBT 600V 6.8A 25W TO220FP
ManufacturerInfineonInfineon Technologies-
Product CategoryIGBT TransistorsIGBTs - Single-
RoHSY--
TechnologySi--
Package / CaseTO-220FP-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage2.15 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C6.8 A--
Pd Power Dissipation25 W--
Minimum Operating Temperature- 55 C--
PackagingTubeTube-
Height9.1 mm--
Length10.6 mm--
Width4.8 mm--
BrandInfineon Technologies--
Product TypeIGBT Transistors--
Factory Pack Quantity2000--
SubcategoryIGBTs--
Part # AliasesSP001545754--
Unit Weight0.081130 oz--
Series---
Package Case-TO-220-3 Full Pack-
Input Type-Standard-
Mounting Type-Through Hole-
Supplier Device Package-TO-220AB Full-Pak-
Power Max-25W-
Reverse Recovery Time trr-28ns-
Current Collector Ic Max-6.8A-
Voltage Collector Emitter Breakdown Max-600V-
IGBT Type---
Current Collector Pulsed Icm-27A-
Vce on Max Vge Ic-2.6V @ 15V, 5A-
Switching Energy-140μJ (on), 120μJ (off)-
Gate Charge-15nC-
Td on off 25°C-40ns/87ns-
Test Condition-480V, 5A, 100 Ohm, 15V-
制造商 型号 描述 RFQ
Infineon Technologies
Infineon Technologies
IRG4IBC10UDPBF IGBT Transistors 600V UltraFast 8-60kHz
IRG4IBC10UDPBF IGBT Transistors 600V UltraFast 8-60kHz
IRG4IBC10UD IGBT 600V 6.8A 25W TO220FP
IRG4IBC10UD,G4IBC10UD,IR 全新原装
IRG4IBC10UDPBF. 全新原装
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