IRG4IBC20K

IRG4IBC20KDPBF vs IRG4IBC20KD vs IRG4IBC20KDPBF.

 
PartNumberIRG4IBC20KDPBFIRG4IBC20KDIRG4IBC20KDPBF.
DescriptionIGBT Transistors 600V UltraFast 8-25kHzIGBT 600V 11.5A 34W TO220FP
ManufacturerInfineonInfineon Technologies-
Product CategoryIGBT TransistorsIGBTs - Single-
RoHSY--
TechnologySi--
Package / CaseTO-220FP-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage2.8 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C11.5 A--
Pd Power Dissipation34 W--
Minimum Operating Temperature- 55 C--
PackagingTubeTube-
Height9.1 mm--
Length10.6 mm--
Width4.8 mm--
BrandInfineon / IR--
Product TypeIGBT Transistors--
Factory Pack Quantity2000--
SubcategoryIGBTs--
Part # AliasesSP001541892--
Unit Weight0.081130 oz--
Series---
Package Case-TO-220-3 Full Pack-
Input Type-Standard-
Mounting Type-Through Hole-
Supplier Device Package-TO-220AB Full-Pak-
Power Max-34W-
Reverse Recovery Time trr-37ns-
Current Collector Ic Max-11.5A-
Voltage Collector Emitter Breakdown Max-600V-
IGBT Type---
Current Collector Pulsed Icm-23A-
Vce on Max Vge Ic-2.8V @ 15V, 9A-
Switching Energy-340μJ (on), 300μJ (off)-
Gate Charge-34nC-
Td on off 25°C-54ns/180ns-
Test Condition-480V, 9A, 50 Ohm, 15V-
制造商 型号 描述 RFQ
Infineon / IR
Infineon / IR
IRG4IBC20KDPBF IGBT Transistors 600V UltraFast 8-25kHz
Infineon Technologies
Infineon Technologies
IRG4IBC20KDPBF IGBT Transistors 600V UltraFast 8-25kHz
IRG4IBC20KD IGBT 600V 11.5A 34W TO220FP
IRG4IBC20KDPBF. 全新原装
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