IRG6S

IRG6S320UTRRPBF vs IRG6S320UPBF vs IRG6S320UTRLPBF

 
PartNumberIRG6S320UTRRPBFIRG6S320UPBFIRG6S320UTRLPBF
DescriptionIGBT ModulesIGBT 330V 50A 114W D2PAKIGBT 330V 50A 114W D2PAK
ManufacturerInfineonInfineon TechnologiesInfineon Technologies
Product CategoryIGBT ModulesIGBTs - SingleIGBTs - Single
RoHSY--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max330 V--
Continuous Collector Current at 25 C50 A--
Package / CaseD-PAK-3--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
PackagingReelTubeDigi-ReelR
Height4.83 mm--
Length10.67 mm--
Width9.65 mm--
BrandInfineon / IR--
Mounting StyleSMD/SMT--
Maximum Gate Emitter Voltage30 V--
Product TypeIGBT Modules--
Factory Pack Quantity50--
SubcategoryIGBTs--
Unit Weight0.009185 oz--
Series---
Package Case-TO-263-3, D2Pak (2 Leads + Tab), TO-263ABTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Input Type-StandardStandard
Mounting Type-Surface MountSurface Mount
Supplier Device Package-D2PAKD2PAK
Power Max-114W114W
Reverse Recovery Time trr---
Current Collector Ic Max-50A50A
Voltage Collector Emitter Breakdown Max-330V330V
IGBT Type-TrenchTrench
Current Collector Pulsed Icm---
Vce on Max Vge Ic-1.65V @ 15V, 24A1.65V @ 15V, 24A
Switching Energy---
Gate Charge-46nC46nC
Td on off 25°C-24ns/89ns24ns/89ns
Test Condition-196V, 12A, 10 Ohm196V, 12A, 10 Ohm
制造商 型号 描述 RFQ
Infineon / IR
Infineon / IR
IRG6S320UTRRPBF IGBT Modules
Infineon Technologies
Infineon Technologies
IRG6S320UTRRPBF IGBT 330V 50A 114W D2PAK
IRG6S330UPBF IGBT Transistors 330V Plasma Display Panel Trench
IRG6S320UPBF IGBT 330V 50A 114W D2PAK
IRG6S320UTRLPBF IGBT 330V 50A 114W D2PAK
IRG6S320U 全新原装
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