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IRG8P40

IRG8P40N120KDPBF vs IRG8P40N120KDEPB vs IRG8P40N120KD-EPBF

 
PartNumberIRG8P40N120KDPBFIRG8P40N120KDEPBIRG8P40N120KD-EPBF
DescriptionIGBT Transistors 1200V IGBT GEN8IGBT 1200V 60A 305W TO-247ADIGBT Transistors 1200V IGBT GEN8
ManufacturerInfineon-Infineon Technologies
Product CategoryIGBT Transistors-IGBTs - Single
RoHSY--
TechnologySi--
Package / CaseTO-247AC-3--
Mounting StyleThrough Hole-Through Hole
ConfigurationSingle-Single
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage1.7 V-1.7 V
Maximum Gate Emitter Voltage30 V-30 V
Continuous Collector Current at 25 C60 A-60 A
Pd Power Dissipation305 W--
Minimum Operating Temperature- 40 C-- 40 C
Maximum Operating Temperature+ 150 C-+ 150 C
PackagingTube-Tube
Continuous Collector Current Ic Max40 A-40 A
BrandInfineon / IR--
Gate Emitter Leakage Current200 nA-200 nA
Product TypeIGBT Transistors--
Factory Pack Quantity25--
SubcategoryIGBTs--
Part # AliasesSP001537700--
Series---
Unit Weight--0.229281 oz
Package Case--TO-247-3
Input Type--Standard
Mounting Type--Through Hole
Supplier Device Package--TO-247AD
Power Max--305W
Reverse Recovery Time trr--80ns
Current Collector Ic Max--60A
Voltage Collector Emitter Breakdown Max--1200V
IGBT Type---
Current Collector Pulsed Icm--75A
Vce on Max Vge Ic--2V @ 15V, 25A
Switching Energy--1.6mJ (on), 1.8mJ (off)
Gate Charge--240nC
Td on off 25°C--40ns/245ns
Test Condition--600V, 25A, 10 Ohm, 15V
Pd Power Dissipation--305 W
Collector Emitter Voltage VCEO Max--1200 V
制造商 型号 描述 RFQ
Infineon / IR
Infineon / IR 		IRG8P40N120KDPBF IGBT Transistors 1200V IGBT GEN8
IRG8P40N120KDEPB IGBT 1200V 60A 305W TO-247AD
Infineon Technologies
Infineon Technologies 		IRG8P40N120KD-EPBF IGBT Transistors 1200V IGBT GEN8
IRG8P40N120KDPBF IGBT Transistors 1200V IGBT GEN8
IRG8P40N120KD 全新原装
IRG8P40N120KDE 全新原装
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