 |  |  | |
| PartNumber | IRGB4056DPBF | IRGB4045DPBF | IRGB4059DPBF |
| Description | IGBT Transistors 600V UltraFast Trench IGBT | IGBT Transistors 600V UltraFast Trench IGBT | IGBT Transistors 600V UltraFast Trench IGBT |
| Manufacturer | Infineon | Infineon | Infineon Technologies |
| Product Category | IGBT Transistors | IGBT Transistors | IGBTs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Package / Case | TO-220AB-3 | TO-220-3 | - |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 600 V | 600 V | - |
| Collector Emitter Saturation Voltage | 1.55 V | 2 V | 2.05 V |
| Maximum Gate Emitter Voltage | 20 V | 20 V | +/- 20 V |
| Continuous Collector Current at 25 C | 24 A | 12 A | 8 A |
| Pd Power Dissipation | 140 W | 77 W | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | - | + 175 C |
| Packaging | Tube | Tube | Tube |
| Continuous Collector Current Ic Max | 24 A | - | 8 A |
| Height | 16.51 mm | 9.02 mm | - |
| Length | 10.67 mm | 10.66 mm | - |
| Width | 4.83 mm | 4.82 mm | - |
| Brand | Infineon Technologies | Infineon / IR | - |
| Gate Emitter Leakage Current | 100 nA | - | - |
| Product Type | IGBT Transistors | IGBT Transistors | - |
| Factory Pack Quantity | 1000 | 50 | - |
| Subcategory | IGBTs | IGBTs | - |
| Part # Aliases | SP001544890 | SP001537650 | - |
| Unit Weight | 0.211644 oz | 0.211644 oz | 0.211644 oz |
| Series | - | - | - |
| Package Case | - | - | TO-220-3 |
| Input Type | - | - | Standard |
| Mounting Type | - | - | Through Hole |
| Supplier Device Package | - | - | TO-220AB |
| Power Max | - | - | 56W |
| Reverse Recovery Time trr | - | - | 55ns |
| Current Collector Ic Max | - | - | 8A |
| Voltage Collector Emitter Breakdown Max | - | - | 600V |
| IGBT Type | - | - | Trench |
| Current Collector Pulsed Icm | - | - | 16A |
| Vce on Max Vge Ic | - | - | 2.05V @ 15V, 4A |
| Switching Energy | - | - | 35μJ (on), 75μJ (off) |
| Gate Charge | - | - | 9nC |
| Td on off 25°C | - | - | 25ns/65ns |
| Test Condition | - | - | 400V, 4A, 100 Ohm, 15V |
| Pd Power Dissipation | - | - | 56 W |
| Collector Emitter Voltage VCEO Max | - | - | 600 V |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IRGB4062DPBF | IGBT Transistors 600V UltraFast Trench IGBT | |
| IRGB4056DPBF | IGBT Transistors 600V UltraFast Trench IGBT | ||
| IRGB4061DPBF | IGBT Transistors 600V UltraFast Trench IGBT | ||
| IRGB4045DPBF | IGBT Transistors 600V UltraFast Trench IGBT | ||
| IRGB4086PBF | IGBT Transistors 300V Plasma Display Panel IGBT Swtch | ||
| IRGB4061DPBF | IGBT Transistors 600V UltraFast Trench IGBT | ||
| IRGB4059DPBF | IGBT Transistors 600V UltraFast Trench IGBT | ||
| IRGB4056DPBF | IGBT Transistors 600V UltraFast Trench IGBT | ||
| IRGB4064DPBF | IGBT Transistors 600V UltraFast Trench IGBT | ||
| IRGB4060DPBF | IGBT Transistors 600V UltraFast Trench IGBT | ||
| IRGB4062DPBF | IGBT Transistors 600V UltraFast Trench IGBT | ||
Infineon / IR |
IRGB4045DPBF | IGBT Transistors 600V UltraFast Trench IGBT | |
| IRGB4064DPBF | IGBT Transistors 600V UltraFast Trench IGBT | ||
| IRGB4045 | 全新原装 | ||
| IRGB4045DP | 全新原装 | ||
| IRGB4045PBF | 全新原装 | ||
| IRGB4056D | 全新原装 | ||
| IRGB4056DPBF. | 全新原装 | ||
| IRGB4059D | 全新原装 | ||
| IRGB4059PBF | 全新原装 | ||
| IRGB4060D | 全新原装 | ||
| IRGB4061 | 全新原装 | ||
| IRGB4061D | 全新原装 | ||
| IRGB4061DPBF-OLD | 全新原装 | ||
| IRGB4062D | 全新原装 | ||
| IRGB4062DPBF. | 全新原装 | ||
| IRGB4064D | 全新原装 | ||
| IRGB4065 | 全新原装 |