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| PartNumber | IRGR3B60KD2TRLP | IRGR3B60KD2T | IRGR3B60KD2TR |
| Description | IGBT Transistors IGBT DISCRETES | ||
| Manufacturer | Infineon | Infineon Technologies | Infineon Technologies |
| Product Category | IGBT Transistors | IGBTs - Single | IGBTs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Package / Case | TO-252AA-3 | - | - |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 600 V | - | - |
| Collector Emitter Saturation Voltage | 1.9 V | - | - |
| Maximum Gate Emitter Voltage | 20 V | +/- 20 V | +/- 20 V |
| Continuous Collector Current at 25 C | 7.8 A | 7.8 A | 7.8 A |
| Pd Power Dissipation | 52 W | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Series | RC | - | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | Digi-ReelR Alternate Packaging |
| Height | 2.39 mm | - | - |
| Length | 6.73 mm | - | - |
| Width | 6.22 mm | - | - |
| Brand | Infineon / IR | - | - |
| Gate Emitter Leakage Current | 100 nA | - | - |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | IGBTs | - | - |
| Tradename | TRENCHSTOP | - | - |
| Part # Aliases | SP001534052 | - | - |
| Unit Weight | 0.012346 oz | 0.012346 oz | 0.012346 oz |
| Package Case | - | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Input Type | - | Standard | Standard |
| Mounting Type | - | Surface Mount | Surface Mount |
| Supplier Device Package | - | D-Pak | D-Pak |
| Power Max | - | 52W | 52W |
| Reverse Recovery Time trr | - | 77ns | 77ns |
| Current Collector Ic Max | - | 7.8A | 7.8A |
| Voltage Collector Emitter Breakdown Max | - | 600V | 600V |
| IGBT Type | - | NPT | NPT |
| Current Collector Pulsed Icm | - | 15.6A | 15.6A |
| Vce on Max Vge Ic | - | 2.4V @ 15V, 3A | 2.4V @ 15V, 3A |
| Switching Energy | - | 62μJ (on), 39μJ (off) | 62μJ (on), 39μJ (off) |
| Gate Charge | - | 13nC | 13nC |
| Td on off 25°C | - | 18ns/110ns | 18ns/110ns |
| Test Condition | - | 400V, 3A, 100 Ohm, 15V | 400V, 3A, 100 Ohm, 15V |
| Collector Emitter Voltage VCEO Max | - | 600 V | 600 V |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon / IR |
IRGR3B60KD2TRRP | IGBT Transistors IGBT DISCRETES | |
| IRGR3B60KD2TRP | IGBT Transistors IGBT DISCRETES | ||
| IRGR3B60KD2TRLP | IGBT Transistors IGBT DISCRETES | ||
| IRGR3B60KD2T | 全新原装 | ||
| IRGR3B60KD2TR | 全新原装 | ||
| IRGR3B60KD2TRPBF | 全新原装 | ||
| IRGR3B60KD2TRPBF. | 全新原装 | ||
| IRGR3B60KD2TRRPBF | 全新原装 | ||
Infineon Technologies |
IRGR3B60KD2TRRP | IGBT Modules 600V3.000ACOPAKD-PAK | |
| IRGR3B60KD2TRLP | IGBT Modules 600V3.000ACOPAKD-PAK | ||
| IRGR3B60KD2TRP | IGBT Transistors 600V3.000ACOPAKD-PAK |