 | |  | |
| PartNumber | IRGS30B60K | IRGS30B60K GS30B60K | IRGS30B60KPBF |
| Description | IGBT Transistors 600V ULTRAFAST 10-30 KHZ IGBT | ||
| Manufacturer | IR | - | Infineon Technologies |
| Product Category | IGBTs - Single | - | IGBTs - Single |
| Series | - | - | - |
| Packaging | - | - | Tube Alternate Packaging |
| Unit Weight | - | - | 0.009185 oz |
| Mounting Style | - | - | SMD/SMT |
| Package Case | - | - | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Input Type | - | - | Standard |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | D2PAK |
| Configuration | - | - | Single |
| Power Max | - | - | 370W |
| Reverse Recovery Time trr | - | - | - |
| Current Collector Ic Max | - | - | 78A |
| Voltage Collector Emitter Breakdown Max | - | - | 600V |
| IGBT Type | - | - | NPT |
| Current Collector Pulsed Icm | - | - | 120A |
| Vce on Max Vge Ic | - | - | 2.35V @ 15V, 30A |
| Switching Energy | - | - | 350μJ (on), 825μJ (off) |
| Gate Charge | - | - | 102nC |
| Td on off 25°C | - | - | 46ns/185ns |
| Test Condition | - | - | 400V, 30A, 10 Ohm, 15V |
| Pd Power Dissipation | - | - | 370 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Collector Emitter Voltage VCEO Max | - | - | 600 V |
| Collector Emitter Saturation Voltage | - | - | 2.35 V |
| Continuous Collector Current at 25 C | - | - | 78 A |
| Gate Emitter Leakage Current | - | - | 100 nA |
| Maximum Gate Emitter Voltage | - | - | +/- 20 V |
| Continuous Collector Current Ic Max | - | - | 78 A |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IRGS30B60KTRRP | IGBT Transistors 600V 30AD2PAK | |
| IRGS30B60KTRRP | IGBT Transistors 600V 30AD2PAK | ||
| IRGS30B60KPBF | IGBT Transistors 600V ULTRAFAST 10-30 KHZ IGBT | ||
| IRGS30B60KTRRPBF | *** FREE SHIPPING ORDERS OVER $100 *** INSULATED GATE BIPOLAR TRANSISTOR, 75A I(C), 600V V(BR)CES, N-CHANNEL (Also Known As: IRGS30B60KPBF) | ||
| IRGS30B60K | 全新原装 | ||
| IRGS30B60K GS30B60K | 全新原装 |