 | |  | |
| PartNumber | IRGSL6B60K | IRGSL6B60KD | IRGSL6B60KDPBF |
| Description | IGBT Transistors 600V UltraFast 10-30kHz | ||
| Manufacturer | IR | Infineon Technologies | Infineon Technologies |
| Product Category | IGBTs - Single | IGBTs - Single | IGBTs - Single |
| Series | - | - | - |
| Packaging | - | Tube | Tube |
| Unit Weight | - | 0.073511 oz | 0.073511 oz |
| Mounting Style | - | Through Hole | Through Hole |
| Package Case | - | TO-262-3 Long Leads, I2Pak, TO-262AA | TO-262-3 Long Leads, I2Pak, TO-262AA |
| Input Type | - | Standard | Standard |
| Mounting Type | - | Through Hole | Through Hole |
| Supplier Device Package | - | TO-262 | TO-262 |
| Configuration | - | Single | Single |
| Power Max | - | 90W | 90W |
| Reverse Recovery Time trr | - | 70ns | 70ns |
| Current Collector Ic Max | - | 13A | 13A |
| Voltage Collector Emitter Breakdown Max | - | 600V | 600V |
| IGBT Type | - | NPT | NPT |
| Current Collector Pulsed Icm | - | 26A | 26A |
| Vce on Max Vge Ic | - | 2.2V @ 15V, 5A | 2.2V @ 15V, 5A |
| Switching Energy | - | 110μJ (on), 135μJ (off) | 110μJ (on), 135μJ (off) |
| Gate Charge | - | 18.2nC | 18.2nC |
| Td on off 25°C | - | 25ns/215ns | 25ns/215ns |
| Test Condition | - | 400V, 5A, 100 Ohm, 15V | 400V, 5A, 100 Ohm, 15V |
| Pd Power Dissipation | - | 90 W | 90 W |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Collector Emitter Voltage VCEO Max | - | 600 V | 600 V |
| Collector Emitter Saturation Voltage | - | 2 V | 2 V |
| Continuous Collector Current at 25 C | - | 13 A | 13 A |
| Maximum Gate Emitter Voltage | - | +/- 20 V | +/- 20 V |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IRGSL6B60KPBF | IGBT 600V 13A 90W TO262 | |
| IRGSL6B60KDPBF | IGBT Transistors 600V UltraFast 10-30kHz | ||
| IRGSL6B60K | 全新原装 | ||
| IRGSL6B60KD | 全新原装 |