IRL8113P

IRL8113PBF vs IRL8113PBF , 2SK1728 vs IRL8113PBF,IRL8113

 
PartNumberIRL8113PBFIRL8113PBF , 2SK1728IRL8113PBF,IRL8113
DescriptionMOSFET MOSFT 30V 105A 23nC 6mOhm Qg log lvl
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current105 A--
Rds On Drain Source Resistance7.1 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge23 nC--
Pd Power Dissipation110 W--
ConfigurationSingle--
PackagingTube--
Height15.65 mm--
Length10 mm--
Transistor Type1 N-Channel--
Width4.4 mm--
BrandInfineon Technologies--
Product TypeMOSFET--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Part # AliasesSP001576430--
Unit Weight0.211644 oz--
制造商 型号 描述 RFQ
Infineon Technologies
Infineon Technologies
IRL8113PBF MOSFET MOSFT 30V 105A 23nC 6mOhm Qg log lvl
IRL8113PBF IGBT Transistors MOSFET MOSFT 30V 105A 23nC 6mOhm Qg log lvl
IRL8113PBF , 2SK1728 全新原装
IRL8113PBF,IRL8113 全新原装
IRL8113PBF-H 全新原装
IRL8113PBF. N CHANNEL MOSFET, 30V, 105A, TO-220AB, Transistor Polarity:N Channel, Continuous Drain Current Id:105A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.006ohm, Rds(on) Test Voltage Vgs:10V,
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