 | | |
| PartNumber | IRLB4030PBF | IRLB4132PBF |
| Description | MOSFET MOSFT 100V 180A 4.3mOhm 87nC | MOSFET TRENCH_MOSFETS |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 30 V |
| Id Continuous Drain Current | 180 A | 150 A |
| Rds On Drain Source Resistance | 4.5 mOhms | 2.5 mOhms |
| Vgs Gate Source Voltage | 16 V | 20 V |
| Qg Gate Charge | 87 nC | 54 nC |
| Pd Power Dissipation | 370 W | 140 W |
| Configuration | Single | Single |
| Packaging | Tube | Tube |
| Height | 15.65 mm | 15.65 mm |
| Length | 10 mm | 10 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 4.4 mm | 4.4 mm |
| Brand | Infineon Technologies | Infineon / IR |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs |
| Part # Aliases | SP001552594 | SP001558130 |
| Unit Weight | 0.211644 oz | 0.035274 oz |
| Vgs th Gate Source Threshold Voltage | - | 1.35 V |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 175 C |
| Channel Mode | - | Enhancement |
| Tradename | - | StrongIRFET |
| Forward Transconductance Min | - | 190 S |
| Fall Time | - | 36 ns |
| Rise Time | - | 92 ns |
| Typical Turn Off Delay Time | - | 25 ns |
| Typical Turn On Delay Time | - | 23 ns |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IRLB4030PBF | MOSFET MOSFT 100V 180A 4.3mOhm 87nC | |
| IRLB4030PBF | MOSFET N-CH 100V 180A TO-220AB | ||
| IRLB4132PBF | MOSFET N-CH 30V 78A TO220 | ||
Infineon / IR |
IRLB4132PBF | MOSFET TRENCH_MOSFETS | |
| IRLB4030 | 全新原装 | ||
| IRLB4132 | 全新原装 | ||
| IRLB4132PBF. | 全新原装 |