IRLW

IRLW510ATM vs IRLW510A vs IRLW520A

 
PartNumberIRLW510ATMIRLW510AIRLW520A
DescriptionMOSFET 100V N-Channel a-FET Logic Level
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current5.6 A--
Rds On Drain Source Resistance440 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation3.8 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height4.83 mm--
Length10.67 mm--
Transistor Type1 N-Channel--
TypeMOSFET--
Width9.65 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min10.2 S--
Fall Time8 ns--
Product TypeMOSFET--
Rise Time10 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time17 ns--
Typical Turn On Delay Time8 ns--
Unit Weight0.011640 oz--
制造商 型号 描述 RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
IRLW630ATM MOSFET 200V N-Channel a-FET Logic Level
IRLW510ATM MOSFET 100V N-Channel a-FET Logic Level
IRLW510A 全新原装
IRLW520A 全新原装
IRLW520ATM MOSFET 100V N-Channel a-FET Logic Level
IRLW530A 全新原装
IRLW530ATM Power Field-Effect Transistor, 14A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
IRLW540A 全新原装
IRLW610A 全新原装
IRLW620ATM 全新原装
IRLW630A 全新原装
IRLW630ATM F630NS 全新原装
IRLW630ATRRPBF 全新原装
IRLW640A 全新原装
IRLWI520A 全新原装
IRLWI620A 全新原装
IRLWZ44ATM 全新原装
ON Semiconductor
ON Semiconductor
IRLW510ATM MOSFET N-CH 100V 5.6A I2PAK
IRLW630ATM MOSFET N-CH 200V 9A I2PAK
IRLW610ATM MOSFET N-CH 200V 3.3A I2PAK
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