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| PartNumber | IS61WV25616EDBLL-8BLI | IS61WV25616EDBLL-8BLI-TR | IS61WV25616EDBLL-8BLI-T |
| Description | SRAM 4Mb, 8ns,3.3V 256K x 16 Asyn SRAM | SRAM 4Mb, 8ns,3.3V 256K x 16 Asyn SRAM | |
| Manufacturer | ISSI | ISSI | - |
| Product Category | SRAM | SRAM | - |
| RoHS | Y | Y | - |
| Memory Size | 4 Mbit | 4 Mbit | - |
| Organization | 256 k x 16 | 256 k x 16 | - |
| Access Time | 8 ns | 8 ns | - |
| Interface Type | Parallel | Parallel | - |
| Supply Voltage Max | 3.63 V | 3.63 V | - |
| Supply Voltage Min | 2.97 V | 2.97 V | - |
| Supply Current Max | 45 mA | 45 mA | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - |
| Maximum Operating Temperature | + 85 C | + 85 C | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | BGA-48 | BGA-48 | - |
| Memory Type | SDR | SDR | - |
| Series | IS61WV25616EDBLL | IS61WV25616EDBLL | - |
| Type | Asynchronous | Asynchronous | - |
| Brand | ISSI | ISSI | - |
| Moisture Sensitive | Yes | Yes | - |
| Product Type | SRAM | SRAM | - |
| Factory Pack Quantity | 480 | 2500 | - |
| Subcategory | Memory & Data Storage | Memory & Data Storage | - |
| Packaging | - | Reel | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
ISSI |
IS61WV25616EDBLL-8BLI | SRAM 4Mb, 8ns,3.3V 256K x 16 Asyn SRAM | |
| IS61WV25616EDBLL-8BLI-TR | SRAM 4Mb, 8ns,3.3V 256K x 16 Asyn SRAM | ||
| IS61WV25616EDBLL-8BLI | SRAM 4Mb, 8ns,3.3V 256K x 16 Asyn SRAM | ||
| IS61WV25616EDBLL-8BLI-T | 全新原装 |