 |  | | |
| PartNumber | IXFB100N50P | IXFB100N | IXFB100N50 |
| Description | MOSFET 100 Amps 500V 0.05 Ohms Rds | ||
| Manufacturer | IXYS | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | PLUS-264-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 500 V | - | - |
| Id Continuous Drain Current | 100 A | - | - |
| Rds On Drain Source Resistance | 49 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 5 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 240 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.25 kW | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | HiPerFET | - | - |
| Packaging | Tube | - | - |
| Height | 26.59 mm | - | - |
| Length | 20.29 mm | - | - |
| Series | IXFB100N50 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | PolarHV HiPerFET Power MOSFET | - | - |
| Width | 5.31 mm | - | - |
| Brand | IXYS | - | - |
| Forward Transconductance Min | 50 S | - | - |
| Fall Time | 26 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 29 ns | - | - |
| Factory Pack Quantity | 25 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 110 ns | - | - |
| Typical Turn On Delay Time | 36 ns | - | - |
| Unit Weight | 0.056438 oz | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Littelfuse |
IXFB100N50Q3 | MOSFET Q3Class HiPerFET Pwr MOSFET 500V/100A | |
| IXFB100N50P | MOSFET 100 Amps 500V 0.05 Ohms Rds | ||
| IXFB100N | 全新原装 | ||
| IXFB100N50 | 全新原装 | ||
| IXFB100N50P | MOSFET N-CH 500V 100A PLUS264 | ||
| IXFB100N50Q3 | MOSFET N-CH 500V 100A PLUS264 |