IXFH21 stock, IXFH21, IXFH21N50


PartNumber	IXFH21N50	IXFH21N50F	IXFH21N50Q
Description	MOSFET 500V 21A	MOSFET N-CH 500V 21A TO247	MOSFET 21 Amps 500V 0.25 Rds
Manufacturer	IXYS	-	IXYS
Product Category	MOSFET	-	IC Chips
RoHS	Y	-	-
Technology	Si	-	Si
Mounting Style	Through Hole	-	Through Hole
Package / Case	TO-247-3	-	-
Number of Channels	1 Channel	-	1 Channel
Transistor Polarity	N-Channel	-	N-Channel
Vds Drain Source Breakdown Voltage	500 V	-	-
Id Continuous Drain Current	21 A	-	-
Rds On Drain Source Resistance	250 mOhms	-	-
Vgs Gate Source Voltage	20 V	-	-
Minimum Operating Temperature	- 55 C	-	- 55 C
Maximum Operating Temperature	+ 150 C	-	+ 150 C
Pd Power Dissipation	300 W	-	-
Configuration	Single	-	Single
Channel Mode	Enhancement	-	Enhancement
Tradename	HyperFET	-	HyperFET
Packaging	Tube	-	Tube
Height	21.46 mm	-	-
Length	16.26 mm	-	-
Series	IXFH21N50	-	IXFH21N50
Transistor Type	1 N-Channel	-	1 N-Channel
Width	5.3 mm	-	-
Brand	IXYS	-	-
Forward Transconductance Min	21 S	-	-
Fall Time	30 ns	-	12 ns
Product Type	MOSFET	-	-
Rise Time	33 ns	-	28 ns
Factory Pack Quantity	30	-	-
Subcategory	MOSFETs	-	-
Typical Turn Off Delay Time	65 ns	-	51 ns
Typical Turn On Delay Time	16 ns	-	25 ns
Unit Weight	0.229281 oz	-	0.229281 oz
Package Case	-	-	TO-247-3
Pd Power Dissipation	-	-	280 W
Vgs Gate Source Voltage	-	-	30 V
Id Continuous Drain Current	-	-	21 A
Vds Drain Source Breakdown Voltage	-	-	500 V
Rds On Drain Source Resistance	-	-	250 mOhms