 |  | | |
| PartNumber | IXFH26N100X | IXFH26N50P | IXFH26N50 |
| Description | MOSFET 1000V 26A TO-247 Power MOSFET | MOSFET HiPERFET Id26 BVdass500 | MOSFET DIODE Id26 BVdass500 |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 1000 V | 500 V | 500 V |
| Id Continuous Drain Current | 8 A | 26 A | 26 A |
| Rds On Drain Source Resistance | 320 mOhms | 230 mOhms | 200 mOhms |
| Vgs th Gate Source Threshold Voltage | 3.5 V | - | - |
| Vgs Gate Source Voltage | 30 V | 30 V | 20 V |
| Qg Gate Charge | 113 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 860 W | 400 W | 300 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | HiPerFET | HiPerFET | HyperFET |
| Packaging | Tube | Tube | Tube |
| Series | X-Class | IXFH26N50 | IXFH26N50 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | IXYS | IXYS | IXYS |
| Forward Transconductance Min | 11 S | 26 S | 21 S |
| Fall Time | 8 ns | 20 ns | 30 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 20 ns | 25 ns | 33 ns |
| Factory Pack Quantity | 30 | 30 | 30 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 62 ns | 58 ns | 65 ns |
| Typical Turn On Delay Time | 29 ns | 20 ns | 16 ns |
| Height | - | 21.46 mm | 21.46 mm |
| Length | - | 16.26 mm | 16.26 mm |
| Width | - | 5.3 mm | 5.3 mm |
| Unit Weight | - | 0.229281 oz | 0.229281 oz |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Littelfuse |
IXFH26N100X | MOSFET 1000V 26A TO-247 Power MOSFET | |
| IXFH26N50P | MOSFET HiPERFET Id26 BVdass500 | ||
| IXFH26N60P | MOSFET 600V 26A | ||
| IXFH26N50P3 | MOSFET Polar3 HiPerFET Power MOSFET | ||
| IXFH26N50 | MOSFET DIODE Id26 BVdass500 | ||
| IXFH26N48 | 全新原装 | ||
| IXFH26N50P | MOSFET N-CH 500V 26A TO-247 | ||
| IXFH26N60 | 全新原装 | ||
| IXFH26N60Q 13+ | 全新原装 | ||
| IXFH26N100X | MOSFET 1KV 26A ULTRA JCT TO247 | ||
| IXFH26N60P | Darlington Transistors MOSFET 600V 26A | ||
| IXFH26N50P3 | Darlington Transistors MOSFET Polar3 HiPerFET Power MOSFET | ||
| IXFH26N50 | MOSFET DIODE Id26 BVdass500 | ||
| IXFH26N50Q | MOSFET 500V 26A | ||
| IXFH26N55Q | MOSFET 26 Amps 550V 0.23 Rds | ||
| IXFH26N60Q | MOSFET 600V 26A |