| PartNumber | IXFK170N20P | IXFK170N20T | IXFK170N25X3 |
| Description | MOSFET 170 Amps 200V 0.014 Rds | MOSFET 170A 200V | MOSFET N-CH 250V 170A TO264 |
| Manufacturer | IXYS | IXYS | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-264-3 | TO-264-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 200 V | 200 V | - |
| Id Continuous Drain Current | 170 A | 170 A | - |
| Rds On Drain Source Resistance | 14 mOhms | 11 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 5 V | 5 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 185 nC | 265 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 1.25 kW | 1.15 kW | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | HiPerFET | HiPerFET | - |
| Packaging | Tube | Tube | - |
| Height | 26.59 mm | 26.16 mm | - |
| Length | 20.29 mm | 19.96 mm | - |
| Series | IXFK170N20 | IXFK170N20 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Type | Polar Power MOSFET HiPerFET | GigaMOS Power MOSFET | - |
| Width | 5.31 mm | 5.13 mm | - |
| Brand | IXYS | IXYS | - |
| Forward Transconductance Min | 45 S | 85 S | - |
| Fall Time | 14 ns | 22 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 25 ns | 28 ns | - |
| Factory Pack Quantity | 25 | 25 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 50 ns | 80 ns | - |
| Typical Turn On Delay Time | 40 ns | 33 ns | - |
| Unit Weight | 0.352740 oz | 0.352740 oz | - |