| PartNumber | IXFN100N50P | IXFN100N50Q3 | IXFN100N20 |
| Description | MOSFET 500V 100A | MOSFET Q3Class HiPerFET Pwr MOSFET 500V/82A | MOSFET 100 Amps 200V 0.023 Rds |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Chassis Mount | Chassis Mount | Chassis Mount |
| Package / Case | SOT-227-4 | SOT-227-4 | SOT-227-4 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 500 V | 500 V | 200 V |
| Id Continuous Drain Current | 90 A | 82 A | 100 A |
| Rds On Drain Source Resistance | 49 mOhms | 49 mOhms | 23 mOhms |
| Vgs Gate Source Voltage | 30 V | 30 V | 20 V |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 1040 W | 960 W | 520 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Tradename | HiPerFET | HiPerFET | HyperFET |
| Packaging | Tube | Tube | Tube |
| Height | 9.6 mm | - | 9.6 mm |
| Length | 38.23 mm | - | 38.23 mm |
| Series | IXFN100N50 | IXFN100N50 | IXFN100N20 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 25.42 mm | - | 25.42 mm |
| Brand | IXYS | IXYS | IXYS |
| Forward Transconductance Min | 80 S | - | - |
| Fall Time | 26 ns | - | 30 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 29 ns | 250 ns | 80 ns |
| Factory Pack Quantity | 10 | 10 | 10 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 110 ns | - | 75 ns |
| Typical Turn On Delay Time | 36 ns | - | 30 ns |
| Unit Weight | 1.058219 oz | 1.058219 oz | 1.058219 oz |
| Qg Gate Charge | - | 255 nC | - |