| PartNumber | IXFN64N50PD2 | IXFN64N50P | IXFN64N60P |
| Description | Discrete Semiconductor Modules 64 Amps 500V | MOSFET 500V 64A | MOSFET 600V 64A |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | Discrete Semiconductor Modules | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Product | Power Semiconductor Modules | - | - |
| Type | Boost and Buck MOSFET Modules | - | - |
| Mounting Style | SMD/SMT | Chassis Mount | Chassis Mount |
| Package / Case | SOT-227B | SOT-227-4 | SOT-227-4 |
| Series | IXFN64N50 | IXFN64N50 | IXFN64N60 |
| Packaging | Tube | Tube | Tube |
| Brand | IXYS | IXYS | IXYS |
| Product Type | Discrete Semiconductor Modules | MOSFET | MOSFET |
| Factory Pack Quantity | 10 | 10 | 10 |
| Subcategory | Discrete Semiconductor Modules | MOSFETs | MOSFETs |
| Unit Weight | 1.058219 oz | 1.058219 oz | 1.058219 oz |
| Technology | - | Si | Si |
| Number of Channels | - | 1 Channel | 1 Channel |
| Transistor Polarity | - | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | - | 500 V | 600 V |
| Id Continuous Drain Current | - | 61 A | 50 A |
| Rds On Drain Source Resistance | - | 85 mOhms | 96 mOhms |
| Vgs Gate Source Voltage | - | 30 V | 30 V |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Pd Power Dissipation | - | 700 W | 700 W |
| Configuration | - | Single | Single |
| Channel Mode | - | Enhancement | Enhancement |
| Tradename | - | HiPerFET | HiPerFET |
| Height | - | 9.6 mm | 9.6 mm |
| Length | - | 38.23 mm | 38.2 mm |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Width | - | 25.42 mm | 25.07 mm |
| Forward Transconductance Min | - | 50 S | 63 S |
| Fall Time | - | 22 ns | 24 ns |
| Rise Time | - | 25 ns | 23 ns |
| Typical Turn Off Delay Time | - | 85 ns | 79 ns |
| Typical Turn On Delay Time | - | 30 ns | 28 ns |