 | |  | |
| PartNumber | IXFX150N30P3 | IXFX150N15 | IXFX150N20 |
| Description | MOSFET N-Channel: Power MOSFET w/Fast Diode | MOSFET 150 Amps 150V 0.0125 Rds | |
| Manufacturer | IXYS | IXYS | - |
| Product Category | MOSFET | MOSFET | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-247-3 | TO-247-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 300 V | 150 V | - |
| Id Continuous Drain Current | 150 A | 150 A | - |
| Rds On Drain Source Resistance | 19 mOhms | 12.5 mOhms | - |
| Configuration | Single | Single | - |
| Tradename | HiPerFET | HyperFET | - |
| Packaging | Tube | Tube | - |
| Series | IXFX150N30 | IXFX150N15 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | IXYS | IXYS | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 30 | 30 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 0.056438 oz | 0.056438 oz | - |
| RoHS | - | Y | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 560 W | - |
| Channel Mode | - | Enhancement | - |
| Height | - | 21.34 mm | - |
| Length | - | 16.13 mm | - |
| Width | - | 5.21 mm | - |
| Fall Time | - | 45 ns | - |
| Rise Time | - | 60 ns | - |
| Typical Turn Off Delay Time | - | 110 ns | - |
| Typical Turn On Delay Time | - | 50 ns | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Littelfuse |
IXFX150N30P3 | MOSFET N-Channel: Power MOSFET w/Fast Diode | |
| IXFX150N15 | MOSFET 150 Amps 150V 0.0125 Rds | ||
| IXFX150N20 | 全新原装 | ||
| IXFX150N30P3 | MOSFET N-CH 300V 150A TO-247 | ||
| IXFX15N100 | MOSFET 1KV 15A | ||
| IXFX150N15 | MOSFET 150 Amps 150V 0.0125 Rds |