| PartNumber | IXFX64N50P | IXFX60N55Q2 | IXFX62N25 |
| Description | MOSFET 64.0 Amps 500 V 0.09 Ohm Rds | MOSFET 60 Amps 550V 0.09 Rds | MOSFET 62 Amps 250V 0.035 Rds |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | PLUS247-3 | TO-247-3 | TO-247-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 500 V | 550 V | 250 V |
| Id Continuous Drain Current | 64 A | 60 A | 62 A |
| Rds On Drain Source Resistance | 85 mOhms | 88 mOhms | 35 mOhms |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 10 V | 30 V | 20 V |
| Qg Gate Charge | 150 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 830 W | 735 W | 390 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | HiPerFET | HyperFET | HyperFET |
| Packaging | Tube | Tube | Tube |
| Height | 21.34 mm | 21.34 mm | 21.34 mm |
| Length | 16.13 mm | 16.13 mm | 16.13 mm |
| Series | IXFX64N50 | IXFX60N55 | IXFX62N25 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Type | PolarHV HiPerFET Power MOSFET | - | - |
| Width | 5.21 mm | 5.21 mm | 5.21 mm |
| Brand | IXYS | IXYS | IXYS |
| Forward Transconductance Min | 30 S | - | - |
| Fall Time | 22 ns | 9 ns | 15 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 25 ns | 14 ns | 25 ns |
| Factory Pack Quantity | 30 | 30 | 30 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 85 ns | 57 ns | 115 ns |
| Typical Turn On Delay Time | 30 ns | 22 ns | 30 ns |
| Unit Weight | 0.056438 oz | 0.056438 oz | 0.056438 oz |