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| PartNumber | IXGH28N60B3D1 | IXGH28N120BD1 | IXGH28N60A3 |
| Description | IGBT Transistors 28 Amps 600V | IGBT Transistors 28 Amps 1200V 3.50 Rds | IGBT Transistors DISC IGBT PT-LOW FREQUENCY |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y | Y |
| Technology | Si | Si | - |
| Package / Case | TO-247AD-3 | TO-247AD-3 | - |
| Mounting Style | Through Hole | Through Hole | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 600 V | 1200 V | - |
| Collector Emitter Saturation Voltage | 1.5 V | - | - |
| Continuous Collector Current at 25 C | 66 A | - | - |
| Pd Power Dissipation | 190 W | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | IXGH28N60 | IXGH28N120 | - |
| Packaging | Tube | Tube | Tube |
| Continuous Collector Current Ic Max | 150 A | 50 A | - |
| Brand | IXYS | IXYS | IXYS |
| Gate Emitter Leakage Current | +/- 100 nA | - | - |
| Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 30 | 30 | 30 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Unit Weight | 0.229281 oz | 0.229281 oz | - |
| Maximum Gate Emitter Voltage | - | 20 V | - |
| Height | - | 21.46 mm | - |
| Length | - | 16.26 mm | - |
| Width | - | 5.3 mm | - |
| Tradename | - | - | GenX3 |