| PartNumber | IXGT60N60C3D1 | IXGT64N60B3 | IXGT64N60B3-TRL |
| Description | IGBT Transistors 60 Amps 600V | IGBT Transistors DISC IGBT PT-MID FREQUENCY | IGBT Transistors IXGT64N60B3 TRL |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| RoHS | Y | - | Y |
| Technology | Si | Si | Si |
| Series | IXGT60N60 | - | - |
| Packaging | Tube | Tube | Reel |
| Brand | IXYS | IXYS | IXYS |
| Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 30 | 30 | 400 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Package / Case | - | TO-268-3 | TO-268-3 |
| Mounting Style | - | SMD/SMT | SMD/SMT |
| Configuration | - | Single | Single |
| Collector Emitter Voltage VCEO Max | - | 600 V | 600 V |
| Collector Emitter Saturation Voltage | - | 1.59 V | 1.8 V |
| Maximum Gate Emitter Voltage | - | 20 V | 20 V |
| Continuous Collector Current at 25 C | - | 64 A | 400 A |
| Pd Power Dissipation | - | 460 W | 460 W |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Continuous Collector Current Ic Max | - | 400 A | 64 A |
| Gate Emitter Leakage Current | - | 100 nA | - |