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| PartNumber | IXTA160N04T2 | IXTA160N10T7 |
| Description | MOSFET 160Amps 40V | MOSFET 160 Amps 100V 6.9 Rds |
| Manufacturer | IXYS | IXYS |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-7 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | 100 V |
| Id Continuous Drain Current | 160 A | 160 A |
| Rds On Drain Source Resistance | 5 mOhms | 7 mOhms |
| Vgs th Gate Source Threshold Voltage | 4 V | - |
| Qg Gate Charge | 79 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C |
| Pd Power Dissipation | 250 W | 430 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Tradename | HiPerFET | HiPerFET |
| Packaging | Tube | Tube |
| Product | TrenchT2 | - |
| Series | IXTA160N04 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Type | TrenchT2 Power MOSFET | - |
| Brand | IXYS | IXYS |
| Forward Transconductance Min | 38 S, 62 S | - |
| Fall Time | 16 ns | 42 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 27 ns | 61 ns |
| Factory Pack Quantity | 50 | 50 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 19 ns | 49 ns |
| Typical Turn On Delay Time | 10 ns | 33 ns |
| Unit Weight | 0.081130 oz | 0.056438 oz |
| Height | - | 4.7 mm |
| Length | - | 10.2 mm |
| Width | - | 9.4 mm |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Littelfuse |
IXTA160N04T2 | MOSFET 160Amps 40V | |
| IXTA160N10T7 | MOSFET 160 Amps 100V 6.9 Rds | ||
| IXTA160N10T7 | MOSFET N-CH 100V 160A TO-263-7 | ||
| IXTA160N04T2 | IGBT Transistors MOSFET 160Amps 40V | ||
| IXTA160N085T | MOSFET N-CH 85V 160A TO-263 | ||
| IXTA160N075T | MOSFET N-CH 75V 160A TO-263 | ||
| IXTA160N10T | MOSFET 160 Amps 100V 6.9 Rds | ||
| IXTA160N075T7 | MOSFET 160 Amps 75V 5.5 Rds |