| PartNumber | IXTH12N100L | IXTH12N150 | IXTH12N100 |
| Description | MOSFET 12 Amps 1000V 1.3 Ohms Rds | MOSFET >1200V High Voltage Power MOSFET | MOSFET 12 Amps 1000V 1.05 Rds |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 1 kV | 1.5 kV | 1 kV |
| Id Continuous Drain Current | 12 A | 12 A | 12 A |
| Rds On Drain Source Resistance | 1.3 Ohms | 2 Ohms | 1.05 Ohms |
| Vgs Gate Source Voltage | 30 V | 30 V | 20 V |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 400 W | 890 W | 300 W |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Tube | Tube | Tube |
| Height | 21.46 mm | 21.46 mm | 21.46 mm |
| Length | 16.26 mm | 16.26 mm | 16.26 mm |
| Series | IXTH12N100 | IXTH12N150 | IXTH12N100 |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Width | 5.3 mm | 5.3 mm | 5.3 mm |
| Brand | IXYS | IXYS | IXYS |
| Fall Time | 65 ns | 14 ns | 32 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 55 ns | 16 ns | 33 ns |
| Factory Pack Quantity | 30 | 30 | 30 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 110 ns | 53 ns | 62 ns |
| Typical Turn On Delay Time | 30 ns | 26 ns | 21 ns |
| Unit Weight | 0.229281 oz | 0.056438 oz | 0.229281 oz |
| Vgs th Gate Source Threshold Voltage | - | 4.5 V | - |
| Qg Gate Charge | - | 106 nC | - |
| Type | - | High Voltage Power MOSFET | - |
| Forward Transconductance Min | - | 8 S | - |