IXTH2

IXTH2N300P3HV vs IXTH2N170D2 vs IXTH2R4N120P

 
PartNumberIXTH2N300P3HVIXTH2N170D2IXTH2R4N120P
DescriptionDiscrete Semiconductor Modules Disc Mosfet N-CH Std-Polar3 TO-247ADMOSFET N-channel MOSFETMOSFET 2.4 Amps 1200V
ManufacturerIXYSIXYSIXYS
Product CategoryDiscrete Semiconductor ModulesMOSFETMOSFET
RoHSY-Y
ProductPower MOSFET Modules--
TypeHigh Voltage--
Vgs Gate Source Voltage20 V-20 V
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-247-3TO-247-3TO-247-3
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
PackagingTubeTubeTube
ConfigurationSingleSingleSingle
BrandIXYSIXYSIXYS
Transistor PolarityN-ChannelN-ChannelN-Channel
Fall Time62 ns-32 ns
Id Continuous Drain Current2 A2 A2.4 A
Pd Power Dissipation520 W-125 W
Product TypeDiscrete Semiconductor ModulesMOSFETMOSFET
Rds On Drain Source Resistance21 Ohms6.5 Ohms7.5 Ohms
Rise Time17 ns-25 ns
Factory Pack Quantity303030
SubcategoryDiscrete Semiconductor ModulesMOSFETsMOSFETs
TradenamePolar3--
Typical Turn Off Delay Time69 ns-70 ns
Typical Turn On Delay Time21 ns-22 ns
Vds Drain Source Breakdown Voltage3000 V1.7 kV1.2 kV
Vgs th Gate Source Threshold Voltage3 V--
Technology-SiSi
Number of Channels-1 Channel1 Channel
Series-IXTH2N170IXTH2R4N120
Transistor Type-1 N-Channel1 N-Channel
Unit Weight-0.056438 oz0.229281 oz
Channel Mode--Enhancement
Height--21.46 mm
Length--16.26 mm
Width--5.3 mm
制造商 型号 描述 RFQ
Littelfuse
Littelfuse
IXTH2N300P3HV Discrete Semiconductor Modules Disc Mosfet N-CH Std-Polar3 TO-247AD
IXTH2N170D2 MOSFET N-channel MOSFET
IXTH2R4N120P MOSFET 2.4 Amps 1200V
IXTH2N300P3HV MOSFET N-CH 3000V 2A TO247HV
IXTH2N170D2 MOSFET N-channel MOSFET
IXTH2R4N120P MOSFET 2.4 Amps 1200V
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