| PartNumber | IXTY01N100-TRL | IXTY01N100D-TRL | IXTY01N100 |
| Description | Discrete Semiconductor Modules High Voltage Power MOSFET | Discrete Semiconductor Modules High Voltage Power MOSFET | MOSFET 0.1 Amps 1000V 80 Rds |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | Discrete Semiconductor Modules | Discrete Semiconductor Modules | MOSFET |
| RoHS | Y | Y | Y |
| Product | Power MOSFET Modules | Power MOSFET Modules | - |
| Type | High Voltage | High Voltage | - |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Packaging | Reel | Reel | Tube |
| Configuration | Single | Single | Single |
| Brand | IXYS | IXYS | IXYS |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Fall Time | 28 ns | 64 ns | 28 ns |
| Id Continuous Drain Current | 100 mA | 400 mA | 100 mA |
| Pd Power Dissipation | 25 W | 25 W | 25 W |
| Product Type | Discrete Semiconductor Modules | Discrete Semiconductor Modules | MOSFET |
| Rds On Drain Source Resistance | 80 Ohms | 80 Ohms | 80 Ohms |
| Rise Time | 12 ns | 10 ns | 12 ns |
| Factory Pack Quantity | 2500 | 2500 | 70 |
| Subcategory | Discrete Semiconductor Modules | Discrete Semiconductor Modules | MOSFETs |
| Typical Turn Off Delay Time | 40 ns | 34 ns | 28 ns |
| Typical Turn On Delay Time | 12 ns | 7 ns | 12 ns |
| Vds Drain Source Breakdown Voltage | 1000 V | 1000 V | 1 kV |
| Vgs th Gate Source Threshold Voltage | 2 V | - 4.5 V | - |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Channel Mode | - | - | Enhancement |
| Height | - | - | 2.38 mm |
| Length | - | - | 6.73 mm |
| Series | - | - | IXTY01N100 |
| Transistor Type | - | - | 1 N-Channel |
| Width | - | - | 6.22 mm |
| Forward Transconductance Min | - | - | 160 mS |
| Unit Weight | - | - | 0.012346 oz |