IXTY3

IXTY32P05T-TRL vs IXTY32P05T vs IXTY3N50P

 
PartNumberIXTY32P05T-TRLIXTY32P05TIXTY3N50P
DescriptionDiscrete Semiconductor Modules TrenchP Power MOSFETMOSFET TrenchP Power MOSFETMOSFET 3.6 Amps 500 V 2 Ohm Rds
ManufacturerIXYSIXYSIXYS
Product CategoryDiscrete Semiconductor ModulesMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
ProductPower MOSFET Modules--
TypeTrenchP--
Vgs Gate Source Voltage15 V--
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-252-3TO-252-3-
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
PackagingReelTubeTube
ConfigurationSingle-Single
BrandIXYSIXYS-
Transistor PolarityP-ChannelP-ChannelN-Channel
Fall Time27 ns-12 ns
Id Continuous Drain Current- 32 A32 A-
Pd Power Dissipation83 W--
Product TypeDiscrete Semiconductor ModulesMOSFET-
Rds On Drain Source Resistance39 mOhms39 mOhms-
Rise Time28 ns-15 ns
Factory Pack Quantity250070-
SubcategoryDiscrete Semiconductor ModulesMOSFETs-
TradenameTrenchP-PolarHV
Typical Turn Off Delay Time39 ns-38 ns
Typical Turn On Delay Time20 ns-15 ns
Vds Drain Source Breakdown Voltage- 50 V50 V-
Vgs th Gate Source Threshold Voltage- 4.5 V--
Technology-SiSi
Series-IXTY32P05IXTY3N50
Unit Weight-0.081130 oz0.012346 oz
Package Case--TO-252-3
Number of Channels--1 Channel
Transistor Type--1 N-Channel
Pd Power Dissipation--70 W
Vgs Gate Source Voltage--30 V
Id Continuous Drain Current--3.6 A
Vds Drain Source Breakdown Voltage--500 V
Vgs th Gate Source Threshold Voltage--5.5 V
Rds On Drain Source Resistance--2 Ohms
Qg Gate Charge--9.3 nC
Forward Transconductance Min--2.5 S
Channel Mode--Enhancement
制造商 型号 描述 RFQ
Littelfuse
Littelfuse
IXTY32P05T-TRL Discrete Semiconductor Modules TrenchP Power MOSFET
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IXTY32P05T IGBT Transistors MOSFET TrenchP Power MOSFET
IXTY3N50P MOSFET 3.6 Amps 500 V 2 Ohm Rds
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