 |  | | |
| PartNumber | KST5550MTF | KST5550 | KST5550-MTF |
| Description | Bipolar Transistors - BJT NPN Si Transistor Epitaxial | ||
| Manufacturer | FAIRCHIL | - | - |
| Product Category | Transistors (BJT) - Single | - | - |
| Packaging | Reel | - | - |
| Part Aliases | KST5550MTF_NL | - | - |
| Unit Weight | 0.002116 oz | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package Case | SOT-23 | - | - |
| Configuration | Single | - | - |
| Pd Power Dissipation | 350 mW | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Collector Emitter Voltage VCEO Max | 140 V | - | - |
| Transistor Polarity | NPN | - | - |
| Collector Emitter Saturation Voltage | 0.25 V | - | - |
| Collector Base Voltage VCBO | 160 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Maximum DC Collector Current | 0.6 A | - | - |
| Gain Bandwidth Product fT | 300 MHz | - | - |
| Continuous Collector Current | 0.6 A | - | - |
| DC Collector Base Gain hfe Min | 60 | - | - |
| DC Current Gain hFE Max | 250 | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor |
KST5550MTF | Bipolar Transistors - BJT NPN Si Transistor Epitaxial | |
| KST5550 | 全新原装 | ||
| KST5550-MTF | 全新原装 | ||
| KST5550MTF , AD22422Z-RL | 全新原装 | ||
| KST5550MTF(1F) | 全新原装 |