 | |  | |
| PartNumber | MJB45H11T4G | MJB45H11G | MJB45H11T4 |
| Description | Bipolar Transistors - BJT 8A 80V 50W PNP | Bipolar Transistors - BJT 8A 80V 50W PNP | |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Transistors (BJT) - Single |
| RoHS | Y | Y | - |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Transistor Polarity | PNP | PNP | PNP |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 80 V | 80 V | - |
| Collector Base Voltage VCBO | 5 V | 5 V | - |
| Emitter Base Voltage VEBO | 5 V | 5 V | - |
| Collector Emitter Saturation Voltage | 1 V | 1 V | 1 V |
| Maximum DC Collector Current | 10 A | 10 A | 10 A |
| Gain Bandwidth Product fT | 40 MHz | 40 MHz | 40 MHz |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Series | MJB45H11 | MJB45H11 | MJB45H11 |
| Height | 4.83 mm | 4.83 mm | - |
| Length | 10.29 mm | 10.29 mm | - |
| Packaging | Reel | Tube | Digi-ReelR Alternate Packaging |
| Width | 9.65 mm | 9.65 mm | - |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Continuous Collector Current | 10 A | 10 A | 10 A |
| DC Collector/Base Gain hfe Min | 60 | 60 | - |
| Pd Power Dissipation | 50 W | 50 W | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 800 | 50 | - |
| Subcategory | Transistors | Transistors | - |
| Unit Weight | 0.050054 oz | 0.081448 oz | - |
| Package Case | - | - | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | D2PAK |
| Power Max | - | - | 2W |
| Transistor Type | - | - | PNP |
| Current Collector Ic Max | - | - | 10A |
| Voltage Collector Emitter Breakdown Max | - | - | 80V |
| DC Current Gain hFE Min Ic Vce | - | - | 40 @ 4A, 1V |
| Vce Saturation Max Ib Ic | - | - | 1V @ 400mA, 8A |
| Current Collector Cutoff Max | - | - | 10μA |
| Frequency Transition | - | - | 40MHz |
| Pd Power Dissipation | - | - | 50 W |
| Collector Emitter Voltage VCEO Max | - | - | 80 V |
| Collector Base Voltage VCBO | - | - | 5 V |
| Emitter Base Voltage VEBO | - | - | 5 V |
| DC Collector Base Gain hfe Min | - | - | 60 |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
| MJB45H11T4G | Bipolar Transistors - BJT 8A 80V 50W PNP | ||
| MJB45H11G | Bipolar Transistors - BJT 8A 80V 50W PNP | ||
| MJB45H11T4 | 全新原装 | ||
| MJB45H11TG | 全新原装 | ||
ON Semiconductor |
MJB45H11 | Bipolar Transistors - BJT 8A 80V 50W PNP | |
| MJB45H11 | TRANS PNP 80V 10A D2PAK-3 | ||
| MJB45H11G | Bipolar Transistors - BJT 8A 80V 50W PNP | ||
| MJB45H11T4G | Bipolar Transistors - BJT 8A 80V 50W PNP |